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Resonant ionization...
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Ivanov, Ivan GueorguievLinköpings universitet,Halvledarmaterial,Tekniska högskolan
(författare)
Resonant ionization of shallow donors in electric field
- Artikel/kapitelEngelska2014
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2014-07-07
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Institute of Physics Publishing (IOPP),2014
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electronicrdacarrier
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LIBRIS-ID:oai:DiVA.org:liu-111496
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-111496URI
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https://doi.org/10.1088/0031-8949/89/8/085802DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
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In this paper, we report on our experimental observations of the resonant ionization of a phosphorus donor in silicon in a homogeneous electric field, which is expressed in the sudden rise of the conductivity of the sample at a low temperature when the electric field approaches the critical value of ∼3.2 MV m-1. The effect is discussed in terms of the field-induced interaction of the states using a simplified model based on the effective-mass theory. The results from our model are qualitatively similar to the previously published advanced model base, which is based on the first principles; this predicts the ionization thresholds at approximate fields of 2.45 and 3.25 MV m-1, the latter being in very good agreement with our experiment. The possibility of observing more than one resonance is also discussed.
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Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)erija14
(författare)
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Linköpings universitetHalvledarmaterial
(creator_code:org_t)
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Ingår i:Physica Scripta: Institute of Physics Publishing (IOPP)89:8, s. 085802-0031-89491402-4896
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