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Search: WFRF:(Karlsson Erik A.) > (2010-2014) > High-speed 850-nm V...

LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00003760naa a2200493 4500
001oai:research.chalmers.se:037b230c-4119-4e01-bae7-dc879697c003
003SwePub
008171008s2010 | |||||||||||000 ||eng|
0247 a https://research.chalmers.se/publication/1285842 URI
0247 a https://doi.org/10.1117/12.8545162 DOI
040 a (SwePub)cth
041 a engb eng
042 9 SwePub
072 7a kon2 swepub-publicationtype
072 7a vet2 swepub-contenttype
1001 a Gustavsson, Johan,d 1974u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)johangus
2451 0a High-speed 850-nm VCSELs for 40 Gb/s transmission
264 1b SPIE,c 2010
520 a We have explored the possibility to extend the data transmission rate for standard 850-nm GaAs-based VCSELs beyond the 10 Gbit/s limit of today's commercially available directly-modulated devices. By sophisticated tailoring of the design for high-speed performance we demonstrate that 10 Gb/s is far from the upper limit. For example, the thermal conductivity of the bottom mirror is improved by the use of binary compounds, and the electrical parasitics are kept at a minimum by incorporating a large diameter double layered oxide aperture in the design. We also show that the intrinsic high speed performance is significantly improved by replacing the traditional GaAs QWs with strained InGaAs QWs in the active region. The best overall performance is achieved for a device with a 9 μm diameter oxide aperture, having in a threshold current of 0.6 mA, a maximum output power of 9 mW, a thermal resistance of 1.9 °C/mW, and a differential resistance of 80 Ω. The measured 3dB bandwidth exceeds 20 GHz, and we experimentally demonstrate that the device is capable of error-free transmission (BER
650 7a NATURVETENSKAPx Fysik0 (SwePub)1032 hsv//swe
650 7a NATURAL SCIENCESx Physical Sciences0 (SwePub)1032 hsv//eng
653 a Vertical cavity surface emitting laser
653 a Electrical parasitics
653 a Transmission
653 a Differential gain
653 a High speed
653 a Subcarrier multiplexing
7001 a Westbergh, Petter,d 1981u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)petwes
7001 a Szczerba, Krzysztof,d 1985u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)szczerba
7001 a Haglund, Åsa,d 1976u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)gu95asha
7001 a Larsson, Anders,d 1957u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)andersla
7001 a Karlsson, Magnus,d 1967u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)magkar
7001 a Andrekson, Peter,d 1960u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)andrekso
7001 a Hopfer, Friedhelmu Technische Universität Berlin4 aut
7001 a Fiol, Gerritu Technische Universität Berlin4 aut
7001 a Bimberg, Dieteru Technische Universität Berlin4 aut
7001 a Olsson, Bengt-Erik,d 1968u Telefonaktiebolaget L M Ericsson,Ericsson4 aut0 (Swepub:cth)beol
7001 a Kristiansson, Annau Telefonaktiebolaget L M Ericsson,Ericsson4 aut
7001 a Healy, S. B.u Tyndall National Institute at National University of Ireland, Cork4 aut
7001 a O'Reilly, E. P.u Tyndall National Institute at National University of Ireland, Cork4 aut
7001 a Joel, A.4 aut
7102 a Chalmers tekniska högskolab Technische Universität Berlin4 org
8564 8u https://research.chalmers.se/publication/128584
8564 8u https://doi.org/10.1117/12.854516

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