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Bistable defect in ...
Bistable defect in mega-electron-volt proton implanted 4H silicon carbide
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- Martin, David M. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Kortegaard Nielsen, Hanne (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Leveque, Patrick (författare)
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- Hallén, Anders. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Alfieri, G. (författare)
- Department of Physics, University of Oslo
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- Svensson, B. G. (författare)
- Department of Physics, University of Oslo
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(creator_code:org_t)
- AIP Publishing, 2004
- 2004
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84:10, s. 1704-1706
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Epitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1x10(12) cm(-2) creates an estimated initial concentration of intrinsic point defects of about 10(14) cm(-3) of which about 10% remain after the implantation and gives rise to deep states in the upper part of the band gap. Here, we investigate the samples prior to high-temperature annealing and a very complex spectrum is revealed. In particular, a bistable defect M is discovered having two DLTS peaks, M-1 and M-3 at E-C-0.42 and around E-C-0.75 eV, respectively, in one configuration and one peak, M-2 at E-C-0.70 eV in the other configuration. The charge dependent thermal activation energies for the transformation between the bistable defect peaks are 0.90 and 1.40 eV.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
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