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  • Yang, Chih-WenPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia (författare)

Epitaxial Growth and Determination of Band Alignment of Bi2Te3–WSe2 Vertical van der Waals Heterojunctions

  • Artikel/kapitelEngelska2020

Förlag, utgivningsår, omfång ...

  • 2020-09-14
  • American Chemical Society (ACS),2020
  • printrdacarrier

Nummerbeteckningar

  • LIBRIS-ID:oai:DiVA.org:ltu-81359
  • https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-81359URI
  • https://doi.org/10.1021/acsmaterialslett.0c00254DOI
  • https://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-108516URI

Kompletterande språkuppgifter

  • Språk:engelska
  • Sammanfattning på:engelska

Ingår i deldatabas

Klassifikation

  • Ämneskategori:ref swepub-contenttype
  • Ämneskategori:art swepub-publicationtype

Anmärkningar

  • Validerad;2020;Nivå 2;2020-11-10 (johcin)
  • Artificial heterojunctions formed by vertical stacking of dissimilar two-dimensional (2D) transition metal dichalcogenide (TMD) monolayer materials in a chosen sequence hold tantalizing prospects for futuristic atomically thin circuits. The emergence of 2D topological insulators (TI), including Bi2Te3, Bi2Se3, and Sb2Te3, represents a new class of 2D building blocks and can complement the existing artificial heterojunctions as a result of their intriguing surface states protected by the time-reversal symmetry. However, the determination of band alignments of such 2D TI/TMD vertical heterojunctions, the key parameter for designing HJ-based electronic/photonic devices, which lies in the development of epitaxy growth, remains in its infancy. Here, we demonstrate the epitaxy growth of 2D TI/TMD vertical heterojunctions comprised of Bi2Te3/WSe2 with atomically clean interfaces that are spectroscopically accessible, and theoretically tractable. Cross-sectional scanning transmission electron microscopy (STEM) images and the presence of interlayer-coupled characteristics from Raman spectroscopy collectively confirm the neat stacking of Bi2Te3/WSe2 with the absence of unwanted containments. Microbeam X-ray photoelectron spectroscopy (ÎŒXPS) measurement coupled with the density functional theory (DFT) calculations and electrical characteristics of field effect transistors quantitatively reveals the type-II alignment of vertically stacked of quintuple layers (QL) Bi2Te3/WSe2. Meanwhile, the type-III band emerges when transitioning to multi-quintuple layer (MQL) Bi2Te3/WSe2. The finding here provides a well-defined example of the epitaxy growth paradigm, the interlayer coupling-electronic properties relationship, for these emerging 2D TI/TMDs vertical heterojunctions. © 2020 American Chemical Society.

Ämnesord och genrebeteckningar

  • NATURVETENSKAP Fysik Annan fysik hsv//swe
  • NATURAL SCIENCES Physical Sciences Other Physics Topics hsv//eng
  • Alignment
  • Density functional theory
  • Electric field effects
  • Electronic properties
  • Field effect transistors
  • Heterojunctions
  • High resolution transmission electron microscopy
  • Scanning electron microscopy
  • Transition metals
  • Van der Waals forces
  • X ray photoelectron spectroscopy
  • Cross-sectional scanning
  • Electrical characteristic
  • Electronic/photonic devices
  • Interlayer coupling
  • Time reversal symmetries
  • Transition metal dichalcogenides
  • Two Dimensional (2 D)
  • Vertical stacking
  • Bismuth compounds
  • Applied Physics
  • Tillämpad fysik

Biuppslag (personer, institutioner, konferenser, titlar ...)

  • Tang, Hao-LingPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,King Abdullah University of Science & Technology (KAUST), Saudi Arabia;Massachusetts Institute of Technology, USA (författare)
  • Sattar, ShahidLuleå tekniska universitet,Materialvetenskap,Luleå University of Technology, Sweden(Swepub:ltu)shasat (författare)
  • Chiu, Ming-HuiPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,King Abdullah University of Science & Technology (KAUST), Saudi Arabia;Massachusetts Institute of Technology, USA (författare)
  • Wan, YiPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia (författare)
  • Chen, Chia-HaoNational Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (författare)
  • Kong, JingDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,Massachusetts Institute of Technology, USA,Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electronic Engineering, and Green Technology Research Center, Chang-Gung University, Taoyuan 333, Taiwan (författare)
  • Huang, Kuo-WeiPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia (författare)
  • Li, Lain-JongPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electronic Engineering, and Green Technology Research Center, Chang-Gung University, Taoyuan 333, Taiwan (författare)
  • Tung, VincentPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia (författare)
  • Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States (creator_code:org_t)

Sammanhörande titlar

  • Ingår i:ACS Materials Letters: American Chemical Society (ACS)2:10, s. 1351-13592639-4979

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