A full band Monte Carlo study of high field carrier transport in 4H-SiC

• The high field transport properties of 4H-SiC have been studied using a bipolar full band ensemble Monte Carlo model. The impact ionization transition rates and the phonon scattering rates for both electrons and holes have been calculated numerically from the full band structure. The simulation results show a large anisotropy in the impact ionization coefficients for both electrons and holes.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

4H-SiC

Monte Carlo

charge transport

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publication and Content Type

ref (subject category)

kon (subject category)