Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers

• Strong enhancement of optical quality in quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates is demonstrated. This has resulted in 3.7 or 5.4 times enhancement of photoluminescence intensity from the metamorphic quantum wells when using dilute nitride superlattice alone or adding nitrogen in a strain compensated GaAs/In0.3Al0.7As superlattice, respectively. This study shows great potentials by incorporating N in metamorphic buffers to further improve the quality of metamorphic optoelectronic devices.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)

Keyword

dislocation

metamorhpic

MBE

dilute nitride

Publication and Content Type

art (subject category)

ref (subject category)