Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE

• Strong enhancement of photoluminescence intensity from InGaAs quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates was demonstrated and investigated. The enhancement of photoluminescence intensity is found to be from both the weak strain effect and the strong lattice hardening effect, indicating blocking effect of threading dislocations due to the N incorporation. Combination of this method with a strain compensated superlattice was proved to be effective in obtaining good quality metamorphic InGaAs quantum wells.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Dislocations

Molecular beam epitaxy

Semiconducting III-V materials

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