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Different Doping Be...
Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires : Implications for Crystal-Phase Device Design
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- Hou, Qichao (författare)
- Zhejiang University
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- Fonseka, H. Aruni (författare)
- University of Warwick
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- Martelli, Faustino (författare)
- CNR Istituto per le Tecnologie Applicate ai Beni Culturali (CNR-ITABC)
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- Paci, Barbara (författare)
- CNR Istituto di Struttura della Materia (CNR-ISM)
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- Gustafsson, Anders (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas
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- Gott, James A. (författare)
- University of Warwick
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- Yang, Hui (författare)
- Imperial College London
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Huo, Suguo (författare)
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- Yu, Xuezhe (författare)
- University College London
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- Chen, Lulu (författare)
- Zhejiang University
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- Chu, Yanmeng (författare)
- Zhejiang University
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- Zha, Chaofei (författare)
- Beijing University of Posts and Telecommunications,Zhejiang University
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- Zhang, Zheyu (författare)
- Zhejiang University
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- Zhang, Linjun (författare)
- Zhejiang University
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- Shang, Fuxiang (författare)
- Zhejiang University
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- Fang, Wenzhang (författare)
- Zhejiang University
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- Cheng, Zhiyuan (författare)
- Zhejiang University
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- Sanchez, Ana M. (författare)
- University of Warwick
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- Liu, Huiyun (författare)
- University College London
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- Zhang, Yunyan (författare)
- Zhejiang University,University College London
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(creator_code:org_t)
- 2023
- 2023
- Engelska 7 s.
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Ingår i: ACS Applied Nano Materials. - 2574-0970. ; 6:13, s. 11465-11471
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Crystal-phase engineering between zinc blende (ZB) and wurtzite (WZ) structures is becoming an important method in designing unique optoelectronic and electronic semiconductor devices. Doping to engineer their electric properties is thus of critical importance, but a direct experimental comparison in doping these two crystal structures is still missing. Nanowires (NWs) allow the coexistence of both structures due to their special growth mode. The differences in dopant incorporation between the two phases are studied here in GaAs NW shells that are coherently grown around the NWs, hence maintaining the crystal structure of the core. The Si dopant is observed to have a higher incorporation efficiency into the WZ structure due to a 2 times lower incorporation energy compared with that of the ZB structure. Besides, it can also be predicted that Si is more inclined toward Ga sites in both structures. Indeed, the As-site doping energy of the WZ structure is several orders of magnitude higher than that of Ga sites, allowing a lower doping compensation effect. This work provides useful information for doping control and hence designing crystal-phase devices.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- crystal-phase devices
- doping efficiency
- nanowire
- Si doping
- wurtzite structure
- zinc blende structure
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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Till lärosätets databas
- Av författaren/redakt...
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Hou, Qichao
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Fonseka, H. Arun ...
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Martelli, Fausti ...
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Paci, Barbara
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Gustafsson, Ande ...
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Gott, James A.
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visa fler...
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Yang, Hui
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Huo, Suguo
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Yu, Xuezhe
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Chen, Lulu
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Chu, Yanmeng
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Zha, Chaofei
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Zhang, Zheyu
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Zhang, Linjun
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Shang, Fuxiang
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Fang, Wenzhang
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Cheng, Zhiyuan
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Sanchez, Ana M.
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Liu, Huiyun
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Zhang, Yunyan
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visa färre...
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