Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots

• A normal incidence photodetector operating at 8-14 μm is demonstrated using p-type δ-doped SiGe dot multilayer structures grown by molecular beam epitaxy on Si(001) substrates. Based on the experimental results of photoluminescence and photoluminescence excitation spectroscopies together with numerical analysis, the origin of the measured photocurrent was attributed to intersubband optical transitions between the heavy hole and light hole states of the valence band of the self-assembled SiGe dots and subsequent lateral transport of photo-excited carriers in the conduction channels formed by Ge wetting layers.

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