MBE growth of Bi2Te3 for Thermoelectrics

• Molecular beam epitaxy of Bi2Te3 on various substrates for thermoelectric applications is investigated. Growth conditions were optimized based on Si(111) substrates with two different growth techniques, co-deposition followed by crystallization and direct growth. Growth of Bi 2Te3 on GaAs, GaN, et. al. substrates with different crystal directions and offcut angles were investigated. High quality Bi2Te3 thin films were achieved with very low carrier density and record high carrier mobility.

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TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

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