Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE

• Threading dislocation blocking by incorporating nitrogen in metamorphic InGaAs buffers on GaAs grown by MBE is demonstrated. This results in large enhancement of photoluminescence intensity from the metamorphic quantum wells.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

Nyckelord

threading dislocation

metamorphic

dilute nitride

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)