Effect of buffer design on structural and electrical properties of InAs films grown on GaAs substrates

• Different buffer structures were grown by molecular beam epitaxy (MBE) to accommodate the large lattice mismatch of InAs with GaAs substrate. A novel graded digital superlattice (GDSL) buffer design was proposed and compared with the common one-step buffer and linear alloy graded (LAG) buffer designs. Effect of buffer structures on structural and electrical properties of the InAs films was investigated. High quality InAs films were obtained on GaAs substrates.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

InAs films

superlatice

MBE

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)