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Investigation of palladium current collectors for vertical graphene-based microsupercapacitors

Vyas, Agin, 1992 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Cornaglia, F. (author)
Chalmers tekniska högskola,Chalmers University of Technology
Rattanasawatesun, T. (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Li, Qi, 1990 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Haque, Mohammad Mazharul, 1984 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Sun, Jie, 1977 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Kuzmenko, Volodymyr, 1987 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Smith, Anderson David, 1985 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Lundgren, Per, 1968 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Enoksson, Peter, 1957 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
IOP Publishing, 2019
2019
English.
In: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 1319:1
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • As microsystems are reduced in size and become integrated in the Internet of Things (IoT), they require an adequate power supply which can be integrated at the same size scale. Microsupercapacitors (MSCs), if coupled with on-chip harvesters, can offer solutions for a self-sustaining, on-chip power supply. However, the implementation of reliable MSC wafer-scale production compatible with CMOS technology remains a challenge. Palladium (Pd) is known as a CMOS compatible metal and, in this paper, we investigate the use of Pd as a contact material for vertical graphene (VG) electrodes in wafer-scale MSC fabrication. We show that a Ti diffusion barrier is required to prevent short-circuiting for the successful employment of Pd contacts. The fabricated MSCs demonstrate a capacitance of 1.3 μF/cm2 with an energy density of 0.42 μJ/cm2. Thus, utilization of a Ti diffusion barrier with a CMOS compatible Pd metal electrode is a step towards integrating MSCs in semiconductor microsystems.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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