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In Situ Activation ...
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
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- O´brien, Nathan (author)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Rouf, Polla (author)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Samii, Rouzbeh (author)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Rönnby, Karl (author)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Buttera, Sydney C. (author)
- Carleton Univ, Canada
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- Chih-Wei, Chih-Wei (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Ivanov, Ivan Gueorguiev (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Kessler, Vadim (author)
- Swedish University of Agricultural Sciences,Sveriges lantbruksuniversitet,Institutionen för Molekylära vetenskaper,Department of Molecular Sciences,Swedish Univ Agr Sci, Sweden
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- Ojamäe, Lars (author)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Pedersen, Henrik (author)
- Linköpings universitet,Kemi,Tekniska fakulteten
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(creator_code:org_t)
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- 2020-04-24
- 2020
- English.
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In: Chemistry of Materials. - : AMER CHEMICAL SOC. - 0897-4756 .- 1520-5002. ; 32:11, s. 4481-4489
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Abstract
Subject headings
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- Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking material for high frequency electronics. The difficulty of depositing high-quality crystalline InN currently impedes its broad implementation in electronic devices. Herein, we report a new highly volatile In(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial hexagonal InN by atomic layer deposition (ALD). The new In(III) precursor, the first example of a homoleptic triazenide used in a vapor deposition process, was easily synthesized and purified by sublimation. Thermogravimetric analysis showed single step volatilization with an onset temperature of 145 degrees C and negligible residual mass. Strikingly, two temperature intervals with self-limiting growth were observed when depositing InN films. In the high-temperature interval, the precursor underwent a gas-phase thermal decomposition inside the ALD reaction chamber to produce a more reactive In(III) compound while retaining self-limiting growth behavior. Density functional theory calculations revealed a unique two-step decomposition process, which liberates three molecules of each propene and N-2 to give a smaller tricoordinated In(III) species. Stoichiometric InN films with very low levels of impurities were grown epitaxially on 4H-SiC. The InN films deposited at 325 degrees C had a sheet resistivity of 920 Omega/sq. This new triazenide precursor enables ALD of InN for semiconductor applications and provides a new family of M-N bonded precursors for future deposition processes.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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O´brien, Nathan
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Rouf, Polla
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Samii, Rouzbeh
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Rönnby, Karl
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Buttera, Sydney ...
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Chih-Wei, Chih-W ...
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show more...
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Ivanov, Ivan Gue ...
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Kessler, Vadim
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Ojamäe, Lars
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Pedersen, Henrik
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show less...
- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Chemical Science ...
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and Materials Chemis ...
- Articles in the publication
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Chemistry of Mat ...
- By the university
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Linköping University
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Swedish University of Agricultural Sciences