Fabrication of beam resonators from hot-wall chemical vapour deposited SiC

• Single crystal and polycrystalline 3C-SiC have been grown in a hot-wall chemical vapour deposition reactor on 100 mm diameter p-type boron-doped (100) Si wafer. The crystal structure of the films has been determined by X-ray diffraction. Moreover, cantilever resonators have been fabricated from the two grown 3C-SiC films using a one-step dry etch and release process. The designed beam length has been varied between 50 and 200 mu m. Resonant frequencies in the range between 110 kHz-1.5 MHz and 50-750 kHz have been obtained for single crystal and polycrystalline Sic devices, respectively. Furthermore, the experimental resonance frequencies have been used to calculate Youngs Modulus E for both types of SiC. The single crystal Sic has shown a relatively high Youngs Modulus (446 GPa) and should be an optimal material for RF-MEMS applications. (c) 2008 Elsevier B.V. All rights reserved.

Keyword

3C-SiC

Hot-wall CVD

MEMS

Cantilever resonators

Youngs Modulus

NATURAL SCIENCES

NATURVETENSKAP

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