Sökning: id:"swepub:oai:DiVA.org:kau-33996" >
Variation of disloc...
Variation of dislocation etch-pit geometry : An indicator of bulk microstructure and recombination activity in multicrystalline silicon
-
- Castellanos, Sergio (författare)
- Massachusetts Institute of Technology, Massachusetts, USA
-
- Kivambe, Maulid (författare)
- Massachusetts Institute of Technology, Massachusetts, USA
-
- Hofstetter, Jasmin (författare)
- Massachusetts Institute of Technology, Massachusetts, USA
-
visa fler...
-
- Rinio, Markus, 1967- (författare)
- Karlstads universitet,Institutionen för ingenjörsvetenskap och fysik (from 2013)
-
- Lai, Barry (författare)
- Argonne Photon Source, Illinois, USA
-
- Buonassisi, Tonio (författare)
- Massachusetts Institute of Technology, Massachusetts, USA
-
visa färre...
-
(creator_code:org_t)
- American Institute of Physics (AIP), 2014
- 2014
- Engelska.
-
Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 115:18, s. 1-7
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Dislocation clusters in multicrystalline silicon limit solar cell performance by decreasing minoritycarrier diffusion length. Studies have shown that the recombination strength of dislocation clusterscan vary by up to two orders of magnitude, even within the same wafer. In this contribution, wecombine a surface-analysis approach with bulk characterization techniques to explore theunderlying root cause of variations in recombination strength among different clusters. We observethat dislocation clusters with higher recombination strength consist of dislocations with a largervariation of line vector, correlated with a higher degree of variation in dislocation etch-pit shapes(ellipticities). Conversely, dislocation clusters exhibiting the lowest recombination strength containmostly dislocations with identical line vectors, resulting in very similar etch-pit shapes. Thedisorder of dislocation line vector in high-recombination clusters appears to be correlated withimpurity decoration, possibly the cause of the enhanced recombination activity. Based on ourobservations, we conclude that the relative recombination activity of different dislocation clustersin the device may be predicted via an optical inspection of the distribution and shape variation ofdislocation etch pits in the as-grown wafer.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- etching
- dislocations
- solar cell
- TEM
- µ-XRF
- silicon
- copper
- Physics
- Fysik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas